Comments (5)
do you check it? I think I checked before and it works fine.... I can not remember now
from ee.
Yes this is the problem which I found just now on STM32F103CBT6 using STM32CubeIDE Version: 1.10.1 HAL 1.8.4
Original code overwrites first FLASH page and the MCU stops working, need to re-program MCU.
After modification everything works fine.
Of course it will be great if someone check this issue.
EDIT:
from stm32f1xx_hal_flash_ex.h, see PageAddress desription, it clearly says it should be FLASH address
/**
- @brief FLASH Erase structure definition
/
typedef struct
{
uint32_t TypeErase; /!< TypeErase: Mass erase or page erase.
This parameter can be a value of @ref FLASHEx_Type_Erase */
uint32_t Banks; /*!< Select banks to erase when Mass erase is enabled.
This parameter must be a value of @ref FLASHEx_Banks */
uint32_t PageAddress; /!< PageAdress: Initial FLASH page address to erase when mass erase is disabled
This parameter must be a number between Min_Data = 0x08000000 and Max_Data = FLASH_BANKx_END
(x = 1 or 2 depending on devices)/
uint32_t NbPages; /!< NbPages: Number of pagess to be erased.
This parameter must be a value between Min_Data = 1 and Max_Data = (max number of pages - value of initial page)/
} FLASH_EraseInitTypeDef;
from ee.
thanks for reporting..
from ee.
please check again. I fixed it
from ee.
Works fine thank you, can be closed
from ee.
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from ee.